The role of border traps in MOS high-temperature postirradiation annealing response

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1323-1334

  Fleetwood, D M ^a   Shaneyfelt, M R ^a   Riewe, L C ^a   Winokur, P S ^a   Reber, R A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; ELECTRON TRANSPORT PROPERTIES; ELECTRONS; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); OXIDES;

BORDER TRAP; INTERFACE TRAP; MIDGAP VOLTAGE SHIFT; POSTIRRADIATION ANNEALING RESPONSE;

MOSFET DEVICES;

EID: 0027797897     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273535     Document Type: Article

References (40)

1. D. M. Fleetwood, “Border Traps in MOS Devices,” IEEE Trans. Nucl. Sci. NS-39, No. 2, 269 (1992).
2. D. M. Fleetwood, P. S. Winokur, R. A. Reber, Jr., T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt, and L. C. Riewe, “Effects of Oxide Traps, Interface Traps, and Border Traps on MOS Devices,” J. Appl. Phys. 73, 5058 (1993).
3. D. M. Fleetwood and J. H. Scofield, “Evidence that Similar Point Defects Cause 1/f Noise and Radiation-Induced-Hole Trapping in MOS Transistors,” Phys. Rev. Lett. 64, 579 (1990).
4. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. Turpin, “Correlating the Radiation Response of MOS Capacitors and Transistors,” IEEE Trans. Nucl. Sci. NS-31, 1453 (1984).
5. R. E. Paulsen, R. R. Siergiej, M. L. French, and M. H. White, “Observation of Near-Interface Oxide Traps with the Charge Pumping Technique,” IEEE Electron Dev. Lett. 13, 627 (1992).
6. D. M. Fleetwood, M. R. Shaneyfelt, J. R. Schwank, P. S. Winokur, and F. W. Sexton, “Theory and Application of Dual-Transistor Charge Separation Analysis,” IEEE Trans. Nucl. Sci. NS-36, 1816 (1989).
7. D. M. Fleetwood, “Long-Term Annealing Study of Midgap Interface-Trap Charge Neutrality,” Appl. Phys. Lett. 60, 2883 (1992).
8. P. J. McWhorter, D. M. Fleetwood, R. A. Pastorek, and G. Zimmerman, “Comparison of MOS Capacitor and Transistor Postirradiation Response,” IEEE Trans. Nucl. Sci. NS-36, 1792 (1989), and references therein.
9. P. S. Winokur, K. G. Kerris, and L. Harper, “Predicting CMOS Inverter Response in Nuclear and Space Environments,” IEEE Trans. Nucl. Sci. NS-30, 4326 (1983).
10. A. Reisman, C. K. Williams, and J. R. Maldonado, “Generation and Annealing of Defects in SiO2,” J. Appl. Phys. 62, 868 (1987).
11. P. M. Lenahan and P. V. Dressendorfer, “Hole Traps and Trivalent Si Centers in MOS Devices,” J. Appl. Phys. 55, 3495 (1984).
12. P. J. McWhorter, P. S. Winokur, and R. A. Pastorek, “Donor/Acceptor Nature of Radiation-Induced Interface Traps,” IEEE Trans. Nucl. Sci. NS-35, 1154 (1988).
13. D. M. Fleetwood, F. V. Thome, S. S. Tsao, P. V. Dressendorfer, V. J. Dandini, and J. R. Schwank, “High-Temperature SOI Electronics for Space Nuclear Power Systems: Requirements and Feasibility,” IEEE Trans. Nucl. Sci. NS-35, No. 5, 1099 (1988).
14. J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, “Physical Mechanisms Contributing to Device Rebound,” IEEE Trans. Nucl. Sci. NS-31, 1434 (1984).
15. D. M. Fleetwood, P. S. Winokur, and J. R. Schwank, “Using Laboratory X-ray and Co-60 Irradiations to Predict CMOS Device Response in Strategic and Space Environments,” IEEE Trans. Nucl. Sci. NS-35, 1497 (1988).
16. J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, P. S. Winokur, C. L. Axness, and L. C. Riewe, “Latent Interface-Trap Buildup and Its Implications for Hardness Assurance,” IEEE Trans. Nucl. Sci. NS-39, 1953 (1992).
17. F. W. Sexton, D. M. Fleetwood, C. C. Aldridge, G. Garrett, J. C. Pelletier, and J. I. Gaona, Jr. “Qualifying Commercial ICs for Space Total-Dose Environments,” IEEE Trans. Nucl. Sci. NS-39, 1869 (1992), and references therein.
18. C. M. Dozier, D. B. Brown, J. L. Throckmorton, and D. I. Ma, “Defect Production in SiO2 by X-ray and Co-60 Radiations,” IEEE Trans. Nucl. Sci. NS-32, 4363 (1985).
19. A. J. Lelis, T. R. Oldham, H. E. Boesch, Jr., and F. B. McLean, “The Nature of the Trapped Hole Annealing Process,” IEEE Trans. Nucl. Sci. NS-36, 1808 (1989); A. J. Lelis, H. E. Boesch, Jr., T. R. Oldham, and F. B. McLean, “Reversibility of Trapped Hole Annealing,” NS-35, 1186 (1988).
20. R. E. Stahlbush, B. J. Mrstik, and R. K. Lawrence, “Post-Irradiation Behavior of Dit and Not,” IEEE Trans. Nucl. Sci. NS-37, 1641 (1990).
21. R. K. Freitag, D. B. Brown, and C. M. Dozier, “Experimental Evidence of Two Species of Radiation-Induced Trapped Positive Charge,” IEEE Trans. Nucl. Sci. NS-40, No. 6 (1993).
22. D. M. Fleetwood, R. A. Reber, Jr., and P. S. Winokur, “Effect of Bias on Thermally Stimulated Current in Irradiated MOS Devices,” IEEE Trans. Nucl. Sci. NS-38, 1066 (1991).
23. D. M. Fleetwood, R. A. Reber, Jr., and P. S. Winokur, “Trapped-Hole Annealing and Electron Trapping in MOS Devices,” Appl. Phys. Lett. 60, 2008 (1992).
24. D. M. Fleetwood, S. L. Miller, R. A. Reber, Jr., P. McWhorter, P. Winokur, M. Shaneyfelt, and J. Schwank, “New Insights into Radiation-Induced Oxide-Trap Charge Through Thermally Stimulated Current Measurement and Analysis,” IEEE Trans. Nucl. Sci. NS-39, 2192 (1992).
25. T. R. Oldham, A. J. Lelis, and F. B. McLean, “Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing,” IEEE Trans. Nucl. Sci. NS-33, 1203 (1986).
26. K. F. Galloway, M. Gaitan, and T. Russell, “A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics,” IEEE Trans. Nucl. Sci. 31, 1497 (1984).
27. F. W. Sexton and J. R. Schwank, “Correlation of Radiation Effects in Transistors and Integrated Circuits,” IEEE Trans. Nucl. Sci. NS-32, 3975 (1985).
28. F. B. McLean and H. E. Boesch, Jr., “Time-Dependent Degradation of MOSFET Channel Mobility Following Pulsed Irradiation,” IEEE Trans. Nucl. Sci. NS-36, 1772 (1989).
29. L. P. Trombetta, F. J. Feigl, and R. J. Zeto, “Positive Charge Generation in MOS Capacitors,” J. Appl. Phys. 69, 2512 (1991), and references therein.
30. E. P. O'Reilly and J. Robertson, “Theory of Defects in Vitreous SiO2,” Phys. Rev. B 27, 3780 (1983).
31. T. L. Meisenheimer and D. M. Fleetwood, “Effect of Radiation-Induced Charge of 1/f Noise in MOS Devices,” IEEE Trans. Nucl. Sci. NS-37, 1696 (1990).
32. T. L. Meisenheimer, D. M. Fleetwood, M. Shaneyfelt, and L. Riewe, “1/f Noise in N- and P-Channel MOS Devices Through Irradiation and Annealing,” IEEE Trans. Nucl. Sci. 38, 1297 (1991).
33. F. J. Grunthaner, P. J. Grunthaner, and J. Maserjian, “Radiation Induced Defects in SiO2 As Determined by XPS,” IEEE Trans. Nucl. Sci. NS-29, 1462 (1982).
34. M. A. Jupina and P. M. Lenahan, “Spin Dependent Recombination: A 29Si Hyperfine Study of Radiation Induced Pb Centers at the Si/SiO2 Interface,” IEEE Trans. Nucl. Sci. NS-37, 1650 (1990).
35. J. R. Schwank and D. Fleetwood, “The Effect of Postoxidation Anneal Temperature on Radiation-Induced Charge Trapping in Poly-Si Gate MOS Devices,” Appl. Phys. Lett. 53, 770 (1988).
36. R. A. B. Devine, D. Mathiot, W. L. Warren, D. M. Fleetwood, and B. Aspar, “Point Defect Generation and Oxide Degradation During Annealing of the Si/SiO2 Interface,” submitted to Appl. Phys. Lett.
37. P. A. Miller, D. M. Fleetwood, and W. K. Schubert, “Damage Due to Electron, Ion, and X-ray Lithography,” J. Appl. Phys. 69, 488 (1991).
38. G. Groeseneken, H. Maes, N. Beltran, and R. DeKeersmaecker, “A Reliable Approach to Charge Pumping Measurements in MOS Transistors,” IEEE Trans. Electron Dev. ED-31, 42 (1984).
39. J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, and P. S. Winokur, “A Critical Comparison of Charge-Pumping, Dual Transistor, and Midgap Measurement Techniques,” IEEE Trans. Nucl. Sci. NS-40, No. 6 (1993).
40. R. A. Reber, Jr. and D. M. Fleetwood, “TSC Measurements of SiO2 Defect Density and Energy in Irradiated MOS Capacitors,” Rev. Sci. Instrum. 63, 5714 (1992).