Hydrogen Barrier Layer Against Silicon Oxidation during Atomic Layer Deposition of Al2 O3 and Hf O2

Journal of the Electrochemical Society

Volumn 154, Issue 2, 2007, Pages

  Frank, Martin M ^a   Wang, Yu ^b   Ho, Ming Tsung ^b   Brewer, Rhett T ^b   Moumen, Naim ^c,d   Chabal, Yves J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c IBM   (United States)

^d SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; HYDROGEN; NUCLEATION; OXIDATION; PERMITTIVITY; SILICON;

ATOMIC LAYER DEPOSITION; GATE STACK SCALING; HAFNIUM OXIDES; SUBNANOMETER;

ALUMINA;

EID: 33846240924     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2405839     Document Type: Article

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