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Volumn 100, Issue 11, 2006, Pages

High-temperature electrical transport in AlxGa 1-xN/GaN modulation doped field-effect transistors

(7) Lu, Changzhi a Xie, Xuesong a Zhu, Xiudian a Wang, Dongfeng a Khan, Arif b Diagne, Ibrahima c Mohammad, S Noor d,e,f

a BEIJING UNIVERSITY OF TECHNOLOGY (China)

b Electrocom Corporation (United States)

c HOWARD UNIVERSITY (United States)

d Howard University (United States)

e UNIVERSITY OF MARYLAND (United States)

f NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN SOURCE CURRENT; GATE VOLTAGE; MODULATION DOPED FIELD-EFFECT TRANSISTORS (MODFET);

ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; GATES (TRANSISTOR); MOS DEVICES; PIEZOELECTRICITY; TEMPERATURE DISTRIBUTION; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 33845729982 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2372569 Document Type: Article

Times cited : (10)

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