High-frequency measurements of AlGaN/GaN HEMTs at high temperatures

IEEE Electron Device Letters

Volumn 22, Issue 8, 2001, Pages 376-377

  Akita, Mitsutoshi ^b   Kishimoto, Shigeru ^b   Mizutani, Takashi ^a,b  

^a IEEE

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

AlGaN GaN HEMT; Electron velocity; fT; Temperature dependence

Indexed keywords

ELECTRON MOBILITY; ENERGY GAP; FREQUENCIES; GALLIUM NITRIDE; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

CUTOFF FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035423512     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.936348     Document Type: Article

References (10)

1. Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-AlGaN heterojunctions
2. Microwave performance of AlGaN/GaN inverted MODFET's
3. High Al-content AlGaN/GaN MODFET's for ultrahigh performance
4. High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
5. GaN/AlGaN field effect transistors for high temperature applications
6. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
7. Evaluation of effective electron velocity in AlGaN/GaN HEMTs
8. Pluse-doped AlGaAs/InGaAs pseudomorphic MODFET's
9. Delay time analysis for 0.4- to 5-μm-gate InAlAs-InGaAs HEMT's
10. Recessed gate GaN MODFETs