High current and transconductance AlGaN/GaN MODFETs at elevated temperatures

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 140-141

  Aktas, O ^a   Fan, Z F ^a   Lu, C ^a   Botchkarev, A ^a   Mohammad, S ^a   Roth, M ^a   Morkoc, H ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; GAIN MEASUREMENT; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSCONDUCTANCE;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030682632     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)