Ion‐implanted GaN junction field effect transistor

Applied Physics Letters

Volumn 68, Issue 16, 1996, Pages 2273-2275

  Zolper, J C ^a   Shul, R J ^a   Baca, A G ^a   Wilson, R G ^b   Pearton, S J ^c   Stall, R A ^d  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Hughes Aircraft Co   (United States)

^c University of Florida   (United States)

^d EMCORE CORPORATION   (United States)

Author keywords

ANNEALING; CALCIUM ADDITIONS; CRYSTAL DOPING; FABRICATION; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; ION IMPLANTATION; SILICON ADDITIONS

Indexed keywords

EID: 0006181847     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115882     Document Type: Article

References (0)