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Volumn 74, Issue 23, 2006, Pages

Core-electron x-ray photoelectron spectroscopy of the evolution of nearly flat, terraced, homogeneously H-terminated Si(100) during prolonged exposure to air at room temperature

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EID: 33845241280     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.74.235407     Document Type: Article
Times cited : (9)

References (48)
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    • Note
    • Actually, hydrogen-terminated silicon is foreseen (Ref.) to react with O2, even in the absence of H2 O, to form a highly reactive silicon radical SiH+ O2 → Si• + HO2•, the barrier energy for this process being about 1.3-1.4 eV. For such an energy, the lifetime of the process in air at atmospheric pressure and 300 K would be of 1014 - 1016 s; this process is thus expected to occur on the laboratory time scale only at temperatures higher than 160-170 °C.
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    • Note
    • The AFM investigation was carried out in tapping mode with a Digital Instruments Multimode apparatus. The noise level before and after each measurement was 0.01 nm. Measurements were carried out at 1.1 Hz by using silicon tips previously tested on epitaxially grown silicon surfaces.
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    • Note
    • This erratic behavior is attributed to the uncontrolled temperature at which the chamber atmosphere is switched from N2 to air-the closer this temperature is to the one at which the reaction in note is activated, the higher the amount of oxidized silicon.
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    • Consistency reasons would require symbol ΛNN instead of ΛN in Eqs. 1 2. As far as confusion is impossible, we prefer the contracted form.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.