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The AFM investigation was carried out in tapping mode with a Digital Instruments Multimode apparatus. The noise level before and after each measurement was 0.01 nm. Measurements were carried out at 1.1 Hz by using silicon tips previously tested on epitaxially grown silicon surfaces.
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This erratic behavior is attributed to the uncontrolled temperature at which the chamber atmosphere is switched from N2 to air-the closer this temperature is to the one at which the reaction in note is activated, the higher the amount of oxidized silicon.
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Actually, assuming a layerlike structure of the native oxide Si Si2 O SiO| Si2 O3 SiO2 H2 O C, the obtained amounts differed from those calculated for structure 1 by only a few percent.
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