Atomic-level study of the robustness of the Si(100)-2X1:H surface following exposure to ambient conditions

Applied Physics Letters

Volumn 78, Issue 7, 2001, Pages 886-888

  Hersam, M C ^a,c   Guisinger, N P ^a   Lyding, J W ^a   Thompson, D S ^b   Moore, J S ^b  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008330122     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1348322     Document Type: Article

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