XPS, AFM, ATR and TPD evidence for terraced, dihydrogen terminated, 1×1 (100) silicon

Surface and Interface Analysis

Volumn 37, Issue 8, 2005, Pages 683-688

  Cerofolini, G F ^a   Cali, D ^a   Galati, C ^a   Reina, S ^a   Renna, L ^a   Spinella, N ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

Attenuated total reflection infrared absorption spectroscopy (ATR IRAS); Hydrogen terminated (100) silicon; Reflection high energy electron diffraction (RHEED); Thermal programmed desorption (TPD); X ray photoelectron spectroscopy (XPS)

Indexed keywords

ATOMIC FORCE MICROSCOPY; COOLING; HIGH TEMPERATURE EFFECTS; INFRARED SPECTROSCOPY; QUENCHING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; TEMPERATURE PROGRAMMED DESORPTION; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATR-IRAS; HYDROGEN-TERMINATED (100) SILICON; PROCESS TEMPERATURE; SURFACE RECONSTRUCTION;

SILICON;

EID: 23444447675     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.2063     Document Type: Article

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