The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. III. Initial conditions

Applied Physics A: Materials Science and Processing

Volumn 77, Issue 3-4, 2003, Pages 403-409

  Cerofolini, G F ^a   Galati, C ^a   Lorenti, S ^a   Renna, L ^a   Viscuso, O ^a   Bongiorno, C ^b   Raineri, V ^b   Spinella, C ^b   Condorelli, G G ^c   Fragala I L ^c   Terrasi, A ^c  

^a STMICROELECTRONICS   (Italy)

^b CNR   (Italy)

^c UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DESORPTION; MOLECULAR STRUCTURE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SINGLE CRYSTALS; SURFACES; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

HYDROGEN TERMINATED SILICON; OXYNITRIDATION; THERMAL PROGRAMMED DESORPTION; X RAY PHOTOEMISSION SPECTROSCOPY;

SILICON;

EID: 0042567516     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-002-1997-0     Document Type: Article

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