Formation of terraced, nearly flat, hydrogen-terminated, (100) Si surfaces after high-temperature treatment in H2 of single-crystalline silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 12, 2005, Pages

  Cerofolini, G F ^a   Galati, C ^a   Reina, S ^a   Renna, L ^a   Spinella, N ^a   Jones, D ^b   Palermo, V ^b  

^a STMICROELECTRONICS   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29844446042     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.125431     Document Type: Article

References (46)

1. H. Herrmann, H. Herzer, and E. Sirtl, Festkoerperprobleme FSTKA2 0430-3393 15, 279 (1975).
2. W. Lin and H. Huff, in Handbook of Semiconductor Manufacturing Technology, edited by, Y. Nishi, and, R. Doering, (M. Dekker, New York, NY, 2000), p. 35.
3. G. F. Cerofolini and L. Meda, Appl. Surf. Sci. ASUSEE 0169-4332 10.1016/0169-4332(95)00050-X 89, 351 (1995).
4. G. F. Cerofolini, Appl. Surf. Sci. ASUSEE 0169-4332 10.1016/S0169- 4332(98)00182-2 133, 108 (1998).
5. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.38.6084 38, 6084 (1988).
6. M. Morita, T. Ohmi, E. Hasegawa, M. Kawakami, and M. Ohwada, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.347181 68, 1272 (1990).
7. G. F. Cerofolini, G. La Bruna, and L. Meda, Appl. Surf. Sci. ASUSEE 0169-4332 10.1016/0169-4332(95)00341-X 93, 255 (1996).
8. M. Terashi, J. Kuge, M. Shinohara, D. Shoji, and M. Niwano, Appl. Surf. Sci. ASUSEE 0169-4332 130-132, 260 (1998).
9. Y. Morita and H. Tokumoto, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.114326 67, 2654 (1995).
10. H. N. Waltenburg and J. T. Yates, Chem. Rev. (Washington, D.C.) CHREAY 0009-2665 10.1021/cr00037a600 95, 1589 (1995).
11. T. Aoyama, K. Goto, T. Yamazaki, and T. Ito, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.580244 14, 2909 (1996).
12. Y. Kumagai, K. Namba, T. Komeda, and Y. Nishioka, J. Vac. Sci. Technol. A JVTAD6 0734-2101 10.1116/1.581301 16, 1775 (1998).
13. F. M. Zimmermann and X. Pan, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.85.618 85, 618 (2000).
14. E. J. Buehler and J. J. Boland, Science SCIEAS 0036-8075 10.1126/science.290.5491.506 290, 506 (2000).
15. G. F. Cerofolini, C. Galati, S. Lorenti, L. Renna, O. Viscuso, C. Bongiorno, V. Raineri, C. Spinella, G. G. Condorelli, I. L. Fragalà, and A. Terrasi, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 10.1007/s00339-002-1997-0 77, 403 (2003).
16. G. F. Cerofolini, C. Galati, and L. Renna, Surf. Interface Anal. SIANDQ 0142-2421 10.1002/sia.1632 35, 968 (2003).
17. G. F. Cerofolini, C. Galati, S. Reina, L. Renna, F. Giannazzo, and V. Raineri, Surf. Interface Anal. SIANDQ 0142-2421 10.1002/sia.2009 37, 71 (2004).
18. G. F. Cerofolini, C. Galati, G. Giorgi, A. Motta, S. Reina, L. Renna, and A. Terrasi, Appl. Phys. A: Mater. Sci. Process. APAMFC 0947-8396 10.1007/s00339-004-3087-y 81, 745 (2005).
19. G. F. Cerofolini, M. Camalleri, C. Galati, S. Lorenti, L. Renna, O. Viscuso, G. G. Condorelli, and I. L. Fragalà, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1404133 79, 2378 (2001).
20. G. F. Cerofolini, C. Galati, and L. Renna, Surf. Interface Anal. SIANDQ 0142-2421 10.1002/sia.1365 34, 583 (2002).
21. H. J. W. Zandvliet, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys. 72.593 72, 593 (2000).
22. K. Arima, K. Endo, T. Kataoka, Y. Oshikane, H. Inoue, and Y. Mori, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.125788 76, 463 (2000).
23. K. Endo, K. Arima, K. Hirose, T. Kataoka, and Y. Mori, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1448880 91, 4065 (2002).
24. V. Palermo and D. Jones, Mater. Sci. Semicond. Process. MSSPFQ 1369-8001 10.1016/S1369-8001(01)00007-5 4, 437 (2001).
25. J. J. Boland, Adv. Phys. ADPHAH 0001-8732 42, 129 (1993).
26. E. J. Buehler and J. J. Boland, Surf. Sci. SUSCAS 0039-6028 10.1016/S0039-6028(99)00205-8 425, L363 (1999).
27. F. S. Tauz and J. A. Schaefer, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.369038 84, 6636 (1998).
28. M. K. Weldon, V. E. Marsico, Y. J. Chabal, A. Agarwal, D. J. Eaglesham, J. Sapjeta, W. L. Brown, D. C. Jacobson, Y. Caudano, S. B. Christman, and E. E. Chaban, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.589416 15, 1065 (1997).
29. Y. J. Chabal and K. Raghavachari, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.54.1055 54, 1055 (1985).
30. In fact, the 1×1 (100) SiH2 surface, obtained by suitable exposure to H of the "perfect" clean 2×1 (100) Si surface, does not restore the original structure at once. Rather upon heating to above 500°C and complete hydrogen desorption, the 2×1 phase appears between silicon clusters and reverts upon further annealing at 570-690°C to the metastable c(4×4) phase before transforming into the well-ordered 2×1 phase by annealing above 700°C. See K. Kato, T. Ide, T. Nishimori, and T. Ichinokawa, Surf. Sci. SUSCAS 0039-6028 10.1016/0039-6028(88)90254-3 207, 177 (1988);
31. T. Ide and T. Mizutani, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.45.1447 45, 1447 (1992);
32. R. I. G. Uhrberg, J. E. Northrup, D. K. Biegelsen, R. D. Bringans and L.-E. Swartz, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.46.10251 46, 10251 (1992);
33. Y. Wang, M. Shi, and J. W. Rabalais, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.48.1678 48, 1678 (1993);
34. M. Yoshimura and K. Ueda, Appl. Surf. Sci. ASUSEE 0169-4332 121/122, 179 (1997).
35. S.-S. Ferng, C.-T. Lin, K.-M. Yang, D.-S. Lin, and T.-C. Chiang, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.94.196103 94, 196103 (2005).
36. J. E. Northrup, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.44.1419 44, R1419 (1991).
37. K. Tagami and M. Tsukada, Surf. Sci. SUSCAS 0039-6028 10.1016/S0039-6028(97)00238-0 384, 308 (1997).
38. K. Tagami and M. Tsukada, Surf. Sci. SUSCAS 0039-6028 10.1016/S0039-6028(97)00897-2 400, 383 (1998).
39. S. Araragi, A. Yoshimoto, N. Nakata, Y. Sugawara, and S. Morita, Appl. Surf. Sci. ASUSEE 0169-4332 10.1016/S0169-4332(01)00938-2 188, 272 (2002).
40. N. Hirashita, M. Kinoshita, I. Aikawa, and T. Ajioka, in Semiconductor Silicon 1990, edited by, H. R. Huff,,, K. G. Barraclough,, and, J. Chikawa, (The Electrochem. Soc., Pennington, NJ, 1990), p. 313.
41. S. K. Jo, J. H. Kang, X. Yan, J. M. White, J. G. Ekerdt, J. W. Keto, and J. Lee, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.85.2144 85, 2144 (2000).
42. F. Corni, C. Nobili, R. Tonini, G. Ottaviani, and M. Tonelli, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1344568 78, 2870 (2001).
43. Z. H. Lu, M. J. Graham, D. T. Jiang, and K. H. Tan, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.110279 63, 2941 (1993).
44. Other interpretations are however possible: For instance, the bright features are reminiscent of the "bright bumps" previously observed and attributed to -SiH3 terminations [see, for instance, X. R. Qin and P. R. Norton, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.53.11100 53, 11100 (1996)], and dark-to-bright changes over time could be explained by the existence at the surface of "bright" -SiH3 species followed by SiH4 loss leading to etching and "dark" pit formation. This is known to be an important mechanism causing instability of the dihydride surface.
45. C. G. Van de Walle, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.49. 4579 49, 4579 (1994).
46. Taking the following bond dissociation energies, Eb[H-H]=4.5eV, Eb[Si-H]=3.5eV; Eb[Si-Sidimer]=2.0eV [at (100) 2×1 SiH], the products of reaction 2 are more stable than the reactants by only 0.5eV. The datum for Eb[Si-Sidimer] is taken from A. Ramstadt, G. Brocks, and P. J. Kelly, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.51.14504 51, 14504 (1995).