SCOPUS 정보 검색 플랫폼

Volumn 35, Issue 10, 2002, Pages 1032-1038

X-ray-photoemission-spectroscopy evidence for anomalous oxidation states of silicon after exposure of hydrogen-terminated single-crystalline (100) silicon to a diluted N2: N2O atmosphere

(8) Cerofolini, G F a Galati, C a Renna, L a Viscuso, O a Camalleri, M a Lorenti, S a Condorelli, G G b Fragala I L b

a STMICROELECTRONICS (Italy)

b UNIVERSITY OF CATANIA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN; OXIDATION; SINGLE CRYSTALS; THRESHOLD VOLTAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

TUNNEL CURRENTS;

SILICON;

EID: 0037150310 PISSN: 00223727 EISSN: None Source Type: Journal
DOI: 10.1088/0022-3727/35/10/311 Document Type: Article

Times cited : (19)

References (27)

1
- 3343006353
- (1988) Phys. Rev. B , vol.38 , pp. 6084
- Himpsel, F.J.¹ McFeely, F.R.² Taleb-Ibrahimi, A.³ Yarnoff, J.A.⁴ Hollinger, G.⁵

2
- 0030151904
- (1996) J. Appl. Phys. , vol.79 , pp. 6653
- Iwata, S.¹ Ishizaka, A.²

3
- 0000650021
- (1995) Phys. Rev. Lett. , vol.74 , pp. 1024
- Pasquarello, A.¹ Hybertsen, M.S.² Car, R.³

4
- 0000886539
- (1996) Phys. Rev. B , vol.53 , pp. 10942
- Pasquarello, A.¹ Hybertsen, M.S.² Car, R.³

5
- 0011135147
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 2824
- McFeely, F.R.¹ Zhang, K.Z.² Banaszak Holl, M.M.³ Lee, S.⁴ Bender J.E. IV⁵

6
- 84918189289
- (1992) J. Vac. Sci. Technol. A , vol.10 , pp. 339
- Niwano, M.¹ Katakura, H.² Takeda, Y.³ Takakuwa, Y.⁴ Miyamoto, N.⁵ Maki, M.⁶

7
- 0040184885
- (1990) J. Appl. Phys. , vol.68 , pp. 1272
- Morita, M.¹ Ohmi, T.² Hasegawa, E.³ Kawakami, M.⁴ Ohwada, M.⁵

8
- 6244250274
- (1996) J. Appl. Phys. , vol.79 , pp. 7114
- Bouvet, D.¹ Cliva, P.A.² Dutoit, M.³ Coluzza, C.⁴ Almeida, J.⁵ Margaritondo, G.⁶ Pio, F.⁷

9
- 0035828577
- (2001) Appl. Phys. Lett. , vol.79 , pp. 2378
- Cerofolini, G.F.¹ Camalleri, M.² Galati, C.³ Lorenti, S.⁴ Renna, L.⁵ Viscuso, O.⁶ Condorelli, G.G.⁷ Fragalà, I.L.⁸

10
- 0032204148
- (1998) IEEE Electron. Dev. Lett. , vol.19 , pp. 426
- Chin, A.¹ Lin, B.C.² Chen, W.J.³ Lin, Y.B.⁴ Tsai, C.⁵

11
- 0030500239
- (1996) J. Vac. Sci. Technol. , vol.14 , pp. 2909
- Aoyama, T.¹ Goto, K.² Yamazaki, T.³ Ito, T.⁴

12
- 21544470315
- (1990) Appl. Phys. Lett. , vol.57 , pp. 1010
- Hwang, H.¹ Ting, W.² Maiti, B.³ Kwong, D.-L.⁴ Leem, J.⁵

13
- 0009154660
- at press
- (2002) Appl. Phys. A , vol.74
- Cerofolini, G.F.¹

14
- 33744538097
- (1972) Phys. Rev. , vol.55 , pp. 4709
- Shirley, D.A.¹

15
- 0034250882
- (2000) Appl. Surf. Sci. , vol.162-163 , pp. 299
- Umeda, T.¹ Yamasaki, S.² Nishizawa, M.³ Yasuda, T.⁴ Tanaka, K.⁵

16
- 0028442654
- (1994) Phys. Rev. Lett. , vol.72 , pp. 4145
- Karlsson, C.J.¹ Owman, F.² Landemark, E.³ Chao, Y.-C.⁴ Mårtensson, P.⁵ Uhrberg, R.I.G.⁶

17
- 4243766361
- (1993) Phys. Rev. Lett. , vol.71 , pp. 2441
- Banaszak Holl, M.M.¹ McFeely, F.R.²

18
- 0000914137
- (1997) J. Appl. Phys. , vol.82 , pp. 2298
- Zhang, K.Z.¹ Greeley, J.N.² Banaszak Holl, M.M.³ McFeely, F.R.⁴

19
- 0000355408
- (1998) Appl. Phys. Lett. , vol.73 , pp. 933
- Kobayashi, H.¹ Kubota, T.² Kawa, H.³ Nakato, Y.⁴ Nishiyama, M.⁵

20
- 0009226865
- (1979) Kin. Kat. , vol.20 , pp. 705
- Radtsig, V.A.¹ Khalif, V.A.²

21
- 0000789191
- (1987) Phys. Rev. B , vol.35 , pp. 8223
- Rudra, J.K.¹ Fowler, W.B.²

22
- 3042910159
- (1990) J. Am. Ceram. Soc. , vol.73 , pp. 3247
- Allan, D.C.¹ Teter, M.P.²

23
- 0000734410
- (1997) Phys. Rev. Lett. , vol.78 , pp. 887
- Boero, M.¹ Pasquarello, A.² Sarnthein, J.³ Car, R.⁴

24
- 0003859870
- ed E. Garfunkel, E. Gusev and A. Vul' (Dordrecht: Kluwer)
- (1998) Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices , pp. 117
- Cerofolini, G.F.¹ Re, N.²

25
- 0020119942
- (1982) Surf. Interface Anal. , vol.4 , pp. 47
- Swift, I.L.¹

26
- 21544480886
- (1993) Appl. Phys. Lett. , vol.63 , pp. 2941
- Lu, Z.H.¹ Graham, M.J.² Jiang, D.T.³ Tan, K.H.⁴

27
- 0034274061
- (2000) Surf. Sci. , vol.463 , pp. 102
- Jolly, F.¹ Rochet, F.² Dufour, G.³ Grupp, C.⁴ Taleb-Ibrahimi, A.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.