Formation of periodic step and terrace structure on Si(100) surface during annealing in hydrogen diluted with inert gas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1775-1778

  Kumagai, Y ^a   Namba, K ^a   Komeda, T ^a   Nishioka, Y ^a  

^a Texas Instruments Japan Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STEP; ATTENUATED TOTAL REFLECTION SPECTRUMS; CONCENTRATION OF; CZOCHRALSKI SI; FLAT SURFACES; GAS FLOWS; HIGH TEMPERATURE; SI ATOMS; SI(1 0 0); SI(100) SURFACE; SURFACE FLATTENING; SURFACE MIGRATION; TERRACE STRUCTURE;

ANNEALING; ATOMIC FORCE MICROSCOPY; ATOMS; DANGLING BONDS; INERT GASES; INFRARED SPECTROSCOPY; LANDFORMS; OLIGOMERS; SILICON; SOIL CONSERVATION;

ATOMIC SPECTROSCOPY;

EID: 0043190864     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581301     Document Type: Article

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