3D size effects in advanced SOI devices

International Journal of High Speed Electronics and Systems

Volumn 16, Issue 1, 2006, Pages 9-30

  Cristoloveanu, Sorin ^a   Ritzenthaler, Romain ^a   Ohata, Akiko ^a   Faynot, Olivier ^b  

^a IMEP LAHC   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTROSTATICS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING FILMS; SILICON; SILICON ON INSULATOR TECHNOLOGY; THERMAL CONDUCTIVITY; ULTRATHIN FILMS;

GATE-INDUCED FLOATING BODY EFFECTS (GIFBE); MINIATURIZATION; QUADRUPLE GATE; ULTRA-THIN GATE OXIDE;

TRANSISTORS;

EID: 33747741821     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156406003515     Document Type: Conference Paper

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