Low frequency noise and hot-carrier reliability in advanced SOI MOSFETs

Solid-State Electronics

Volumn 48, Issue 6, 2004, Pages 985-997

  Dieudonné, François ^a   Haendler, Sébastien ^a   Jomaah, Jalal ^a   Balestra, Francis ^a  

^a IMEP LAHC   (France)

Author keywords

Floating Body Effect (FBE); Gate tunneling; Hot carrier reliability; Low frequency noise (LFN); Partially Depleted (PD); Silicon on insulator (SOI)

Indexed keywords

ELECTRIC POTENTIAL; FREQUENCIES; HOT CARRIERS; RELIABILITY; SEMICONDUCTING FILMS; SILICA; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE; ULTRATHIN FILMS;

FLOATING BODY EFFECT (FBE); GATE TUNNELING; HOT-CARRIER RELIABILITY; LOW FREQUENCY NOISE (LFN); PARTIALLY DEPLETED (PD);

MOSFET DEVICES;

EID: 1442311895     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.025     Document Type: Article

References (31)

1. Lee W.-C., Hu C. Modeling CMOS tunneling currents through ultra-thin gate oxide due to conduction- and valence-band electron and hole tunneling. IEEE Trans. Electron Dev. 48(July):2001;1366-1373.
2. Choi C.-H., Nam K.-Y., Yu Z., Dutton R.W. Impact of gate direct tunneling current on circuit performance: a simulation study. IEEE Trans. Electron Dev. 48(Dec):2001;2823-2829.
3. Pretet J, Matsumoto T, Poiroux T, Cristoloveanu S, Gwoziecki R, Raynaud C, et al. New mechanism of body charging in Partially Depleted SOI-MOSFETs with ultra-thin gate oxides, In: Proc 32nd ESSDERC, Firenze, Italy, September 2002. p. 515-8.
4. Agarwal AK, Driver MC, Hanes MH, Hodgood HM, McMullin PG, Nathanson HC, et al. MICROX™ - An advanced Silicon technology for microwave circuits up to X-band. In: Proc IEDM Tech Dig, 1991. p. 687-90.
5. Eggert D., Huebler P., Huerrich A., Kuerck H., Budde W., Vorwerk M. A SOI-RF-CMOS technology on high resistivity SIMOX substrates for microwave applications to 5 GHz. IEEE Trans. Electron Dev. 44(11):1997;1981-1989.
6. Rozeau O, Jomaah J, Haendler S, Boussey J, Balestra F. SOI technologies overview for low-power low-voltage radio-frequency applications. Analog Integrated Circuits Signal Process 2000:25. Kluwer Academic Publishers - Special issue on SOI.
7. Takeda E. Hot carrier effects in MOS devices. 1995;Academic Press.
8. Tsai CW. Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETs. IEDM Tech Dig, 2000.
9. Min BW. Hot carrier enhanced gate current and its impact in short channel nMOSFET reliability with ultra-thin gate oxides. IEDM Tech Dig, 2001.
10. Zhao E-X, et al. Worst case conditions for hot-carrier induced degradation of sub-100 nm Partially Depleted SOI MOSFETs. 2001 IEEE SOI Conf, 2000. p. 121-2.
11. Yeh W-K, et al. Hot-carrier induced degradation on 0.1μm SOI CMOSFET. 2002 IEEE SOI Conf, 2002. p. 107-8.
12. Chan J, et al. Charge pumping study of hot-carrier induced degradation of sub-100 nm Partially Depleted SOI MOSFETs. 2002 IEEE SOI Conf, 2000. p. 43-4.
13. Renn S.-H., et al. Hot-carrier effect and reliable lifetime prediction in deep submicron N- and P-channel SOI MOSFETs. IEEE Trans. Electron Dev. 45(11):1998;2335-2342.
14. Sze S.M. Physics of semiconductor devices. 2nd ed. 1981;John Wiley & Sons. p. 867.
15. Pretet J., Subba N., Ioannou D., Cristoloveanu S., Maszara W., Raynaud C. IEEE Electron Dev. Lett. 23:2002;55.
16. McWhorter A.L. Semiconductor surface physics. 1957;University of Pennsylvania Press, Philadelphia.
17. Ghibaudo G., Roux O., Nguyen-Duc Ch., Balestra F., Brini J. Improved analysis of low frequency noise in field-effect MOS transistors. Phys. Stat. Sol. (a). 124:1991;571.
18. Christensson S., Lundstrom I., Svensson C. Low-frequency noise in MOS transistors - I. Solid State Electron. 11:1968;797-812.
19. Kolarova R., Skotnicki T., Chroboczek J.A. Low-frequency noise in thin gate oxide MOSFETs. Microelectron. Reliab. 41:2000;579-585.
20. Dieudonné F, Haendler S, Jomaah J, Raynaud C, De Meyer K, Van Meer H, et al. Shrinking from 0.25 down to 0.12μm SOI CMOS technology node: a contribution to 1/f noise in Partially Depleted N-MOSFETs. In: Proc 3rd European Workshop on Ultimate Integration of Silicon, Munich, March 2002. p. 33-6.
21. Simoen E., Magnusson U., Rotondaro Antonio L.P., Cor Claeys The Kink-related excess low frequency noise in Silicon-on-insulator MOSTs. IEEE Trans. Electron Dev. 41(March):1994;330-339.
22. Tseng Y.-C., Huang W.M., Welch P.J., Ford J.M., Woo J.C.S. Empirical correlation between AC kink and low frequency noise overshoot in SOI MOSFETs. IEEE EDL. 19(5):1998;157-159.
23. Dieudonné F., et al. Gate-induced Floating Body effect excess noise in ultra-thin gate oxide Partially Depleted SOI MOSFETs. IEEE Eletron Dev. Lett. 23(12):2002;737-739.
24. Marchand B, et al. Generation of hot carriers by secondary impact ionization in deep submicron devices: model and light emission characterization. Int Reliability Physics Symposium, San Jose (USA), Proceedings, 2000. p. 93-7.
25. Dieudonné F, et al. The role of externally applied body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs. 2001 Int SOI Conference, Durango (USA), October 1-4, Proceedings, 2001. p. 123-4.
26. Dieudonné F, et al. The impact of an external body-bias on the hot-carrier degradation of Partially Depleted SOI N-MOSFETs at cryogenic temperatures, WOLTE'02, Proceedings, Journal de Physique IV, pp. 11-14, June 2002.
27. Lee W., Hwang H. Hot carrier degradation for narrow width MOSFET with shallow trench isolation. Microelectron. Reliab. 40:2000;49-56.
28. Li E., Prasad S. Channel width dependence of NMOSFET hot carrier degradation. IEEE Trans. Electron Dev. 50(6):2003;1545-1548.
29. Chen J., et al. Sub breakdown drain leakage current in MOSFET. IEEE Electron Dev. Lett. 8:1987;515-517.
30. Takeda E., Suzuki N. An empirical model for device degradation due to hot carrier injection. IEEE Electron Dev. Lett. 4(4):1983;111-113.
31. Renn S.-H., et al. Hot-carrier effect and reliable lifetime prediction in deep submicron N- and P-channel SOI MOSFET's. IEEE Trans. Electron Dev. 45(11):1998;2335-2342.