Transition from partial to full depletion in silicon-on-insulator transistors: Impact of channel length

Applied Physics Letters

Volumn 84, Issue 7, 2004, Pages 1192-1194

  Allibert, F ^a,b   Pretet, J ^a,c   Pananakakis, G ^a   Cristoloveanu, S ^a  

^a IMEP LAHC   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTHS; DEBYE LENGTH; FERMI POTENTIAL;

CARRIER CONCENTRATION; COMPUTER SIMULATION; MATHEMATICAL MODELS; MOSFET DEVICES; PERMITTIVITY; POISSON EQUATION; SEMICONDUCTOR DOPING; TRANSISTORS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 1542678788     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1646461     Document Type: Article

References (7)

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2. S. Cristoloveanu, Solid-State Electron. 45, 1403 (2001).
3. J. P. Colinge, Silicon-on-Insulator Technology: Materials to VLSI (Kluwer Academic, London, 1991).
4. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2nd ed. (Wiley, New York, 1986).
5. T. Skotnicki, G. Merckel, and T. Pedron, IEEE Electron Device Lett. 9, 109 (1988).
6. J. H. Luscombe and C. L. Frenzen, Solid-State Electron. 46, 885 (2002).
7. Silvaco International, 4701 Patrick Henry Drive, Santa Clara, CA 95054.