Narrow-channel effects and their impact on the static and floating-body characteristics of STI- and LOCOS-isolated SOI MOSFETs

Solid-State Electronics

Volumn 46, Issue 11, 2002, Pages 1699-1707

  Pretet, J ^a,b   Ioannou, D ^a,c   Subba, N ^c   Cristoloveanu, S ^a   Maszara, W ^d   Raynaud, C ^e  

^a IMEP LAHC   (France)

^b STMICROELECTRONICS   (France)

^c GEORGE MASON UNIVERSITY   (United States)

^d ADVANCED MICRO DEVICES   (United States)

^e CEA LETI   (France)

Author keywords

Carrier lifetime; Floating body effects; Narrow channel effects; SOI MOSFETs; Source body junction leakage

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; TOPOLOGY;

SILICON FILMS;

MOSFET DEVICES;

EID: 0036838416     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00147-8     Document Type: Conference Paper

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