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Volumn 13, Issue 32, 2001, Pages 6875-6892

High pressure growth of bulk GaN from solutions in gallium

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL GROWTH; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); FREE ENERGY; HIGH PRESSURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NUCLEATION; SINGLE CRYSTALS; SUPERSATURATION;

EID: 0035855094     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/13/32/301     Document Type: Article
Times cited : (99)

References (42)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.