Fast growth of high quality GaN

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 13-17

  Gogova, D ^a,b   Larsson, H ^a   Yakimova, R ^a   Zolnai, Z ^a,c   Ivanov, I ^a   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; HETEROJUNCTIONS; LOW TEMPERATURE EFFECTS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; SUBSTRATES; VAPOR PHASE EPITAXY;

HIGH QUALITY GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY; SAPPHIRE SUBSTRATES; THERMALLY LATCHED SUBSTRATES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0346885875     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303342     Document Type: Article

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