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Volumn 243, Issue 7, 2006, Pages 1545-1550

Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction

Author keywords

[No Author keywords available]

Indexed keywords


EID: 33745761034     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200565294     Document Type: Conference Paper
Times cited : (4)

References (17)
  • 14
    • 18244391420 scopus 로고    scopus 로고
    • Nitride Semiconductors, edited by P. Ruterana, M. Albrecht, and J. Neugebauer (Wiley-VCH, Berlin)
    • P. Gibart, B. Beaumont, and P. Vennéguès, in: Nitride Semiconductors, Handbook on Materials and Devices, edited by P. Ruterana, M. Albrecht, and J. Neugebauer (Wiley-VCH, Berlin, 2003), pp. 45-106.
    • (2003) Handbook on Materials and Devices , pp. 45-106
    • Gibart, P.1    Beaumont, B.2    Vennéguès, P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.