Positron annihilation study of HYPE grown thick GaN layers

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 713-717

  Misheva, M ^a   Larsson, H ^b   Gogova, D ^b,c   Monemar, B ^b  

^a UNIVERSITY OF SOFIA   (Bulgaria)

^b LINKÖPING UNIVERSITY   (Sweden)

^c BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM-FED VERTICAL REACTORS; DEFECT CONCENTRATION; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

ATMOSPHERIC PRESSURE; CONCENTRATION (PROCESS); PHOTOLUMINESCENCE; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; SAPPHIRE; SINGLE CRYSTALS; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 25444487735     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200461420     Document Type: Conference Paper

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