Reduction of stress at the initial stages of GaN growth on Si(111)

Applied Physics Letters

Volumn 82, Issue 1, 2003, Pages 28-30

  Dadgar, A ^a   Poschenrieder, M ^a   Reiher, A ^a   Blasing J ^a   Christen, J ^a   Krtschil, A ^a   Finger, T ^a   Hempel, T ^a   Diez, A ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN BOUNDARIES; PHOTOLUMINESCENCE; SILICON; STRESS ANALYSIS; TENSILE STRESS; THERMAL STRESS; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY;

GALLIUM NITRIDE;

EID: 0037421403     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1534940     Document Type: Article

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