Investigation of the structural and optical properties of free-standing GaN grown by HVPE

Journal of Physics D: Applied Physics

Volumn 38, Issue 14, 2005, Pages 2332-2337

  Gogova, D ^a,b   Hemmingsson, C ^b   Monemar, B ^b   Talik, E ^c   Kruczek, M ^c   Tuomisto, F ^d   Saarinen, K ^d  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^b LINKÖPING UNIVERSITY   (Sweden)

^c UNIVERSITY OF SILESIA   (Poland)

^d AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CRACK INITIATION; CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FABRICATION; NITROGEN; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; PHONONS; RAMAN SCATTERING; RELAXATION PROCESSES; SEPARATION; SPECTROSCOPY; STRAIN; SUBSTRATES; X RAY DIFFRACTION;

ANNIHILATION; CARRIER GAS; HETEROEPITAXIAL GROWTH; HYDRIDE VAPOR PHASE EPITAXY (HVPE); PHONON-PLASMON COUPLED MODE;

GALLIUM NITRIDE;

EID: 22144455392     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/14/007     Document Type: Article

References (30)

1. Nakamura S, Pearton S and Fasol G 1997 The Blue Laser Diode (New York: Springer)
2. Kordos P, Moric M, Betko J, Novak J, Flynn J and Brandes G R 2004 Appl. Phys. Lett. 85 5616
3. Gogova D et al 2004 Japan. J. Appl. Phys. 43 1264
4. Martínez-Criado G, Miskys C R, Cros A, Ambacher O, Cantarero A and Stutzmann M 2001 J. Appl. Phys. 90 5627
5. Chen C Q et al 2002 Appl. Phys. Lett. 81 3194
6. Monemar B, Bergman J P, Buyanova I, Amano H, Akasaki I, Hiramatsu K, Sawaki N and Detchprohm T 1997 Solid State Electron 41 239
7. Trassoudaine A, Cadoret R and Aujol E 2003 Nitride Semiconductors, Handbook on Materials and Devices ed P Ruterana et al (New York: Wiley-VCH) p 193
8. Behr D, Wagner J, Schneider J, Amano H and Akasaki I 1996 Appl. Phys. Lett. 68 2404
9. Kelly M K, Vaudo R P, Phanse V M, Görgens L, Ambacher O and Stutzmann M 1999 Japan. J. Appl. Phys. 38 L217
10. Monemar B, Larsson H, Hemmingsson C, Ivanov I G and Gogova D 2005 J. Cryst. Growth at press
11. Moulder J F, Stickle W F, Sobol P E and Bomben K D 1995 Handbook of X-ray Photoelectron Spectroscopy ed J Chastain and R C King Jr (Eden Prairie, MN: Physical Electronics) p 25
12. Saarinen K, Hautojärvi P and Corbel C 1998 Identification of Defects in Semiconductors ed M Stavola (New York: Academic) p 209
13. Prabhakaran K, Andersson T G and Nozawa K 1996 Appl. Phys. Lett. 69 3212
14. Wolter S D, DeLuca J M, Mohney S E, Kern R S and Kiu C P 2000 Thin Solid Films 371 153
15. Meister D et al 2000 J. Appl. Phys. 88 1811
16. Ploog K H and Brandt O 1998 J. Vac. Sci. Technol. A 16 1609
17. Gogova D et al 2004 J. Appl. Phys. 96 799
18. Jasinski J, Swider W, Liliental-Weber Z, Visconty P, Jones K M, Reshchikov M A, Yun F, Morkoç H, Park S S and Lee K Y 2001 Appl. Phys. Lett. 78 2297
19. Morkoç H 2001 Mater. Sci. Eng. R 33 135
20. Vaudo R P, Brandes G R, Flynn J S, Xu X, Chriss M F, Christos C S, Keogh D M and Tamweber F D 2000 Proc. Int. Workshop on Nitride Semiconductors (IPAP Conf. Series vol 1) p 15
21. Chierchia R, Boettcher T, Heinke H, Einfeldt S, Figge S and Hommel D 2003 J. Appl. Phys. 93 8919
22. Heying B, Wu X H, Keller S, Li Y, Kapolnek D, Keller B P, DenBaars S P and Speck J S 1996 Appl. Phys. Lett. 68 643
23. Leszczynski M et al 1996 Appl. Phys. Lett. 69 73
24. Tuomisto F et al 2003 Phys. Status Solidi b 240 289
25. Saarinen K et al 1997 Phys. Rev. Lett. 79 3030
26. Oila J, Kivioja J, Ranki V, Saarinen K, Look D C, Molnar R J, Park S S, Lee S K and Han J Y 2003 Appl. Phys. Lett. 82 3433
27. Tuomisto F, Saarinen K, Lucznik B, Grzegory I, Teisseyre H, Suski T, Porowski S, Hageman P R and Likonen J 2005 Appl. Phys. Lett. 86 031915
28. Saarinen K 2000 III-V Nitride Semiconductors: Electrical, Structural and Defects Properties ed M O Manasreh (Amsterdam: Elsevier) p 109
29. Wagner J-M and Bechstedt F 2002 Phys. Rev. B 66 115202
30. Gõi A R, Siegle H, Syassen K, Thomsen C and Wagner J-M 2001 Phys. Rev. B 64 035205