Defect and stress control of AlGaN for fabrication of high performance UV light emitters

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2679-2685

  Amano, H ^a   Miyazaki, A ^a   Iida, K ^a   Kawashima, T ^a   Iwaya, M ^a   Kamiyama, S ^a   Akasaki, I ^a   Liu, R ^b   Bell, A ^b   Ponce, F A ^b   Sahonta, S ^c   Cherns, D ^c  

^a MEIJO UNIVERSITY   (Japan)

^b ARIZONA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LIGHT EMITTING DIODES; LIQUID CRYSTAL DISPLAYS; PHOTOLUMINESCENCE; POWER SUPPLY CIRCUITS; SEMICONDUCTING GALLIUM COMPOUNDS; ULTRAVIOLET RADIATION; ANNEALING; BROADCASTING; DEFECTS; DIFFUSION; ELECTRODES; OPTICAL COMMUNICATION; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR LASERS; STRESS ANALYSIS; ULTRAVIOLET DEVICES;

CARRIER DIFFUSION LENGTH; COLOR RENDERING; DISLOCATION DENSITY; FACET CONTROLLED HETEROEPITAXIAL LATERAL OVERGROWTH (FAC HELO); EMISSION WAVELENGTHS; LIGHT EMITTERS; STRESS CONTROL; THREADING DISLOCATIONS (TD);

SEMICONDUCTING ALUMINUM COMPOUNDS; LIGHT EMITTING DIODES;

EID: 7244240752     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200405044     Document Type: Conference Paper

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