Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification

Solid-State Electronics

Volumn 50, Issue 6, 2006, Pages 1004-1011

  Chen, Zhi ^a   Guo, Jun ^a  

^a UNIVERSITY OF KENTUCKY   (United States)

Author keywords

Coupling; Gate oxide; Leakage current; Phonon

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TUNNELING; ENERGY EFFICIENCY; HAFNIUM COMPOUNDS; OXIDES; PHONONS; PROBABILITY; SILICON;

COUPLING; GATE OXIDES; PHONON-ENERGY-COUPLING ENHANCEMENT (PECE); STRUCTURE MODIFICATION; ULTRATHIN OXIDES;

LEAKAGE CURRENTS;

EID: 33745750951     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.04.045     Document Type: Article

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