Hot carrier effects in nMOSFETs in 0.1μm CMOS technology

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1999, Pages 253-258

  Li, E ^a   Rosenbaum, E ^a   Tao, J ^a   Yeap, G C F ^a   Lin, M R ^a   Fang, P ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; DEUTERIUM; ELECTRIC CURRENTS; HOT CARRIERS; INTEGRATED CIRCUIT MANUFACTURE; METALLIZING; SEMICONDUCTOR SWITCHES; STRESSES; SUBSTRATES;

CHANNEL LENGTH; GATE TUNNELING CURRENT; SUBSTRATE CURRENT;

MOSFET DEVICES;

EID: 0032606765     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)