Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification

2005 International Semiconductor Device Research Symposium

Volumn 2005, Issue , 2005, Pages 240-241

  Chen, Zhi ^a   Guo, Jun ^a   Samantaray, Chandan B ^a  

^a UNIVERSITY OF KENTUCKY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847217613     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. K. Onishi, R. N. Choi, C. S. Kang et al., in the IEDM Technical Digest, vol. 50, pp. 1517-1524, 2003.
2. L.-A. Ragnarsson et al., in the IEDM Technical Digest, pp. 87-90, 2003.
3. Z. Chen and J. Guo, presented at the 35th IEEE SISC, San Diego, CA, Dec. 9-11, 2004.
4. E. P. Gusev et al., in IEDM Technical Digest, pp. 451-454, 2001.
5. Z. Chen, J. Guo, and P. Ong, Appl. Phys. Lett, Vol. 83, 2151-2153, 2003.