Statistical analysis of soft and hard breakdown in 1.9-4.8-nm-thick gate oxides

IEEE Electron Device Letters

Volumn 25, Issue 5, 2004, Pages 305-307

  Mizubayashi, Wataru ^a,b   Yoshida, Yuichi ^a   Murakami, Hideki ^a   Miyazaki, Seiichi ^a   Hirose, Masataka ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Hard breakdown (HBD); Si O Si bond angle; Soft breakdown (SBD); Ultrathin gate oxide; Weibull slope

Indexed keywords

BOND STRENGTH (MATERIALS); ELECTRIC BREAKDOWN; MOS CAPACITORS; OXIDES;

HARD BREAKDOWN; SOFT BREAKDOWN; ULTRAHIGH GATE OXIDE;

WEIBULL DISTRIBUTION;

EID: 2442533004     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.826505     Document Type: Letter

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