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Journal of the Electrochemical Society

Volumn 149, Issue 8, 2002, Pages

Interface hardening with deuterium implantation

(2) Misra, D a Jarwal, R K a

a NEW JERSEY INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; DEUTERIUM; ELECTRON TRAPS; ENERGY GAP; GROWTH (MATERIALS); INTERFACES (MATERIALS); ION IMPLANTATION; LEAKAGE CURRENTS; OXIDES; POLYSILICON; SEMICONDUCTING SILICON; SILICA;

GATE OXIDE; INTERFACE HARDENING; INTERFACE STATE DENSITY; PASSIVATE SILICON DANGLING BONDS; SILICON BANDGAP;

SEMICONDUCTOR DIODES;

EID: 0036688062 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1485084 Document Type: Article

Times cited : (13)

References (30)

1
- 0019614215
- (1981) J. Vac. Sci. Technol. , vol.19 , pp. 390
- Johnson, N.M.¹ Biegelsen, D.K.² Moyer, M.D.³

2
- 30844431996
- (1989) Semicond. Sci. Technol. , vol.4 , pp. 961
- Poindexter, E.H.¹

3
- 0024732464
- (1989) J. Electrochem. Soc. , vol.136 , pp. 2609
- Gerardi, G.J.¹

4
- 0000119442
- (1998) Phys. Rev. B , vol.57 , pp. 10030
- Stesmans, A.¹ Afanas'ev, V.V.²

5
- 0015207089
- (1971) J. Appl. Phys. , vol.42 , pp. 5654
- Nicollian, E.H.¹ Berglund, C.N.² Schmidt, P.F.³ Andrews, J.M.⁴

6
- 0030126232
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2526
- Lyding, J.W.¹ Hess, K.² Kizilyalli, I.C.³

7
- 0031999501
- (1998) IEEE Trans. Electron Devices , vol.ED-45 , pp. 406
- Hess, K.¹ Kizilyalli, I.C.² Lyding, J.W.³

8
- 0032489754
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1721
- Mogul, H.C.¹ Cong, L.² Wallace, R.M.³ Chen, P.J.⁴ Rost, T.A.⁵ Harvey, K.⁶

9
- 0000564754
- (1997) Appl. Phys. Lett. , vol.70 , pp. 2999
- Devine, R.A.B.¹ Autran, J.-L.² Warren, W.L.³ Vanheusdan, K.L.⁴ Rostaing, J.-C.⁵

10
- 0010115930
- (1998) Appl. Phys. Lett. , vol.72 , pp. 450
- Baumvol, I.J.R.¹ Gusev, E.P.² Stedile, F.C.³ Freire, F.L.⁴ Green, M.L.⁵ Brasen, D.⁶

11
- 0001593417
- (1998) Appl. Phys. Lett. , vol.73 , pp. 3441
- Chen, P.J.¹ Wallace, R.M.²

12
- 84886448104
- (1997) Tech. Dig. Int. Electron Devices Meet. , pp. 445
- Krishnan, S.¹ Rangan, S.² Hattangady, S.³ Xing, G.⁴ Brennan, K.⁵ Rodder, M.⁶ Ashok, S.⁷

13
- 0002509664
- (1999) IEEE Electron Device Lett. , vol.20 , pp. 48
- Clark, W.F.¹ Ference, T.G.² Hook, T.B.³ Watson, K.M.⁴ Mittl, S.W.⁵ Burnham, J.S.⁶

14
- 0033169510
- (1999) IEEE Trans. Electron Devices , vol.46 , pp. 1812
- Lee, J.¹ Epstein, Y.² Berti, A.C.³ Huber, J.⁴ Hess, K.⁵ Lyding, J.W.⁶

16
- 0033332622
- (1999) Tech. Dig. Int. Electron Devices Meet. , pp. 89
- Clark, W.F.¹ Cottrell, P.E.² Ference, T.G.³ Lo, S.-H.⁴ Massey, J.G.⁵ Mittl, S.W.⁶ Rankin, J.H.⁷

17
- 0003221633
- (1999) Appl. Phys. Lett. , vol.74 , pp. 709
- Kim, H.¹ Hwang, H.²

18
- 0034452571
- (2000) Tech. Dig. Int. Electron Devices Meet. , pp. 343
- Mitani, Y.¹ Satake, H.² Itoh, H.³ Toriumi, A.⁴

19
- 0026896102
- (1992) J. Electrochem. Soc. , vol.139 , pp. 2042
- Park, H.¹ Helms, C.R.²

20
- 0032121584
- (1998) IEEE Electron Device Lett. , vol.19 , pp. 231
- Cheung, K.P.¹ Misra, D.² Colonell, J.I.³ Liu, C.-T.⁴ Ma, Y.⁵ Chang, C.-P.⁶ Lai, W.-Y.-C.⁷ Liu, R.⁸ Pai, C.-S.⁹

22
- 0033284341
- (1999) Electrochem. Solid-State Lett. , vol.2 , pp. 637
- Misra, D.¹ Kishore, S.²

23
- 0028539731
- (1994) IEEE Electron Device Lett. , vol.15 , pp. 460
- Cheung, K.P.¹

24
- 0001346739
- (1991) Phys. Rev. B , vol.44 , pp. 1832
- Edwards, A.H.¹

25
- 0003610719
- Wiley New York
- (1982) MOS (Metal Oxide Semiconductor) Physics and Technology , pp. 207
- Nicollian, E.H.¹ Brews, J.R.²

26
- 0010214738
- (1993) J. Phys. Chem. , vol.97 , pp. 8208
- Darling, C.L.¹ Schlegel, H.B.²

27
- 0025417078
- (1990) Colloids Surf. , vol.A45 , pp. 213
- Poindexter, E.H.¹ Gerardi, G.J.²

28
- 0031150264
- (1997) Microelectron. Eng. , vol.36 , pp. 219
- Uren, M.J.¹ Brunson, K.M.² Stathis, J.H.³ Cartier, E.⁴

29
- 0000530024
- (1994) Phys. Rev. B , vol.50 , pp. 11666
- Andersson, M.O.¹ Lundgren, A.² Lundgren, P.³

30
- 0001546595
- (2001) Appl. Phys. Lett. , vol.78 , pp. 637
- Lin, C.H.¹ Lee, M.H.² Liu, C.W.³

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