Quality improvement of ultrathin gate oxide by using thermal growth followed by SF ANO technique

IEEE Electron Device Letters

Volumn 25, Issue 10, 2004, Pages 687-689

  Yang, Yi Lin ^a   Hwu, Jenn Gwo ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL UNITED UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CAPACITANCE; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; GATES (TRANSISTOR); LEAKAGE CURRENTS; SILICON WAFERS;

METAL OXIDE SEMICONDUCTOR (MOS); SCANNING FREQUENCY ANODIZATION; ULTRATHIN GATE OXIDE;

MOSFET DEVICES;

EID: 5044240747     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.836031     Document Type: Article

References (11)

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