NH3-RTP grown ultra-thin oxynitride layers for MOS gate applications

Materials Science and Engineering: B

Volumn 118, Issue 1-3, 2005, Pages 55-59

  Chung, H Y A ^a   Dietl, W ^a   Niess, J ^a   Nenyei Z ^a   Lerch, W ^a   Wieczorek, K ^b   Krumm, N ^b   Ludsteck, A ^c   Eisele, I ^c  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

^b IBM MICROELECTRONICS   (United States)

^c BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Leakage current; Post nitridation annealing; RTP; SiO2; Threshold voltage; Ultra thin oxynitrides

Indexed keywords

ANNEALING; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITRIDING; PLASMA APPLICATIONS; THRESHOLD VOLTAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

POST NITRIDATION ANNEALING; RTP; SPONTANEOUS REOXIDATION; ULTRATHIN OXYNITRIDES;

MOS DEVICES;

EID: 15344345110     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.12.082     Document Type: Conference Paper

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