A possible mechanism for improved light-induced degradation in deuterated amorphous-silicon alloy

Applied Physics Letters

Volumn 71, Issue 11, 1997, Pages 1498-1500

  Wei, Jeng Hua ^a   Sun, Ming Shyan ^a   Lee, Si Chen ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000237833     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119972     Document Type: Article

References (10)

1. D. L. Staebler and C. R. Wronski, Appl. Phys. Lett. 31, 291 (1977).
2. J. W. Lyding, K. Hess, and I. C. Kiziyalli, Appl. Phys. Lett. 68, 2526 (1996).
3. S. Sugiyama, Y. Yang, and S. Guha. Appl. Phys. Lett. 70, 378 (1997).
4. D. Redfield and R. H. Bube, Appl. Phys. Lett. 54, 1037 (1989).
5. D. Redfield and R. H. Bube, J. Appl. Phys. 66, 820 1989).
6. R. H. Bube, L. Echeverria, and D. Redfield, Appl. Phys. Lett. 57, 79 (1990).
7. W. J. Tzeng, H. K. Tsai, and S. C. Lee, J. Appl. Phys. 62, 1856 (1987).
8. W. J. Tzeng and S. C. Lee, Appl. Phys. Lett. 53, 2044 (1988).
9. M. Stutzmann, W. B. Jackson, and C. C. Tsai, Phys. Rev. B 34, 63 (1986).
10. M. H. Brodsky, M. Cardona, and J. J. Cuomo, Phys. Rev. B 16, 3556 (1977).