Effects of plasma nitridation on ultra-thin gate oxide electrical and reliability characteristics

Solid-State Electronics

Volumn 49, Issue 1, 2005, Pages 57-61

  He, Yandong ^a   Xu, Mingzhen ^a   Tan, Changhua ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Gate leakage current; NBTI; Plasma nitrided oxide; Rapid thermal oxynitride oxide; SILC; TDDB

Indexed keywords

ANNEALING; CARRIER MOBILITY; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; NITRIFICATION; OPTIMIZATION; OXIDES; PLASMA APPLICATIONS; RELIABILITY; ULTRATHIN FILMS;

GATE LEAKAGE CURRENTS; NBTI; PLASMA NITRIDED OXIDE; RAPID THERMAL OXYNITRIDE OXIDE; SILC; TDDB;

GATES (TRANSISTOR);

EID: 9544238122     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.06.013     Document Type: Article

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