Stress distribution on (100) Si wafer mapped by novel I-V analysis of MOS tunneling diodes

IEEE Electron Device Letters

Volumn 24, Issue 6, 2003, Pages 408-410

  Hong, Chao Chi ^a   Hwu, Jenn Gwo ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Current voltage; MOS; RTP; Stress

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SILICON WAFERS; STRESS CONCENTRATION; TENSILE STRENGTH;

INJECTION SATURATION CURRENT;

MOS DEVICES;

EID: 0042091972     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.813365     Document Type: Article

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