-
1
-
-
0034762579
-
An infinitely selective repair buffer for EUVL reticles
-
J. Wasson, K. Smith, P. Mangat, and S. Hector, "An Infinitely Selective Repair Buffer for EUVL Reticles", Proc. SPIE 4343, 402, 2001
-
(2001)
Proc. SPIE
, vol.4343
, pp. 402
-
-
Wasson, J.1
Smith, K.2
Mangat, P.3
Hector, S.4
-
2
-
-
0034763986
-
TaN EUVL mask fabrication and characterization
-
P.-y. Yan, G. Zhang, A. Ma, and T. Liang, "TaN EUVL Mask Fabrication and Characterization", Proc. SPIE 4343, 409, 2001
-
(2001)
Proc. SPIE
, vol.4343
, pp. 409
-
-
Yan, P.-Y.1
Zhang, G.2
Ma, A.3
Liang, T.4
-
3
-
-
0034759382
-
Tantalum nitride films for the absorber material of reflective-type EUVL mask
-
M. Takahashi, T. Ogawa, E. Hoshino, H. Hoko, B. T. Lee, A. Chiba, H. Yamanashi, and S. Okazaki, "Tantalum nitride films for the absorber material of reflective-type EUVL mask", Proc. SPIE 4343, 760, 2001
-
(2001)
Proc. SPIE
, vol.4343
, pp. 760
-
-
Takahashi, M.1
Ogawa, T.2
Hoshino, E.3
Hoko, H.4
Lee, B.T.5
Chiba, A.6
Yamanashi, H.7
Okazaki, S.8
-
4
-
-
0036643649
-
Characteristics of Ru as a buffer layer or an etch stopper for EUVL mask patterning
-
B. T. Lee, E. Hoshino, M. Takahashi, T. Yoneda, H. Yamanashi, H. Hoko, A. Chiba, M. Ito, T. Ogawa, S. Okazaki, "Characteristics of Ru as a buffer layer or an etch stopper for EUVL mask patterning", Microelec. Eng. 61-62, 233, 2002
-
(2002)
Microelec. Eng.
, vol.61-62
, pp. 233
-
-
Lee, B.T.1
Hoshino, E.2
Takahashi, M.3
Yoneda, T.4
Yamanashi, H.5
Hoko, H.6
Chiba, A.7
Ito, M.8
Ogawa, T.9
Okazaki, S.10
-
5
-
-
0036378919
-
EUVL masks: Requirements and potential solutions
-
S. Hector, "EUVL Masks: Requirements and Potential Solutions", Proc. SPIE 4688, 134, 2002
-
(2002)
Proc. SPIE
, vol.4688
, pp. 134
-
-
Hector, S.1
-
6
-
-
0036380264
-
The impact of EUVL mask buffer and absorber material properties on mask quality and performance
-
P.-y. Yan, "The Impact of EUVL Mask Buffer and Absorber Material Properties on Mask Quality and Performance" Proc. SPIE 4688, 150, 2002
-
(2002)
Proc. SPIE
, vol.4688
, pp. 150
-
-
Yan, P.-Y.1
-
7
-
-
1842579509
-
EUVL mask with Ru ML capping
-
P.-y. Yan, G. Zhang, S. Chegwidden, E. Spiller, and P. Mirkarimi, "EUVL Mask with Ru ML Capping", Proc. SPIE 5256, 1281, 2003
-
(2003)
Proc. SPIE
, vol.5256
, pp. 1281
-
-
Yan, P.-Y.1
Zhang, G.2
Chegwidden, S.3
Spiller, E.4
Mirkarimi, P.5
-
8
-
-
0141724752
-
Process for improved reflectivity uniformity in extreme-ultraviolet lithography (EUVL) masks
-
C. Thiel, K. Racette, E. Fisch, and M. Lawliss, "Process for improved reflectivity uniformity in extreme-ultraviolet lithography (EUVL) masks", Proc. SPIE 5037, 339, 2003
-
(2003)
Proc. SPIE
, vol.5037
, pp. 339
-
-
Thiel, C.1
Racette, K.2
Fisch, E.3
Lawliss, M.4
-
9
-
-
0141836117
-
Rigorous em simulation of the influence of the structure of mask patterns on EUVL imaging
-
Y. Deng, B. L. Fontaine, H. J. Levinson, and A R. Neureuther, "Rigorous EM simulation of the influence of the structure of mask patterns on EUVL imaging", Proc. SPIE 5037, 302, 2003
-
(2003)
Proc. SPIE
, vol.5037
, pp. 302
-
-
Deng, Y.1
Fontaine, B.L.2
Levinson, H.J.3
Neureuther, A.R.4
-
10
-
-
3843071987
-
Simulation of fine structures and defects in EUV etched multilayer masks
-
Y. Deng, B. L. Fontaine, A. R. Pawloski, and A R. Neureuther, "Simulation of fine structures and defects in EUV etched multilayer masks", Proc. SPIE 5374 760, 2004
-
(2004)
Proc. SPIE
, vol.5374
, pp. 760
-
-
Deng, Y.1
Fontaine, B.L.2
Pawloski, A.R.3
Neureuther, A.R.4
-
11
-
-
0033265196
-
Actinic detection of sub-100 nm defects on extreme ultraviolet lithography mask blanks
-
S. Jeong, L. Johnson, S. Rekawa, C. C. Walton, S. T. Prisbrey, E. Tejnil, J. H. Underwood, J. Bokor, "Actinic detection of sub-100 nm defects on extreme ultraviolet lithography mask blanks", J. Vac. Sci. Technol. B 176, 3009, 1999
-
(1999)
J. Vac. Sci. Technol. B
, vol.176
, pp. 3009
-
-
Jeong, S.1
Johnson, L.2
Rekawa, S.3
Walton, C.C.4
Prisbrey, S.T.5
Tejnil, E.6
Underwood, J.H.7
Bokor, J.8
-
12
-
-
0036380158
-
Numerical investigation of EUV mask contact layer defect printability at the 30 nm technology node
-
A. Y. Abdo, and P-y. Yan, "Numerical investigation of EUV mask contact layer defect printability at the 30 nm technology node", Proc. SPIE 4688, 725, 2002
-
(2002)
Proc. SPIE
, vol.4688
, pp. 725
-
-
Abdo, A.Y.1
Yan, P.-Y.2
-
13
-
-
0141501368
-
Defect repair for extreme ultraviolet lithography (EUVL) mask blanks
-
S. P. Hau-Riege, A. Barty, P. B. Mirkarimi, D. G. Stearns, H Chapman, D. Sweeney, M. Clift, E. Gullikson, M.-S. Yi, "Defect repair for extreme ultraviolet lithography (EUVL) mask blanks", Proc. SPIE 5037, 331, 2003
-
(2003)
Proc. SPIE
, vol.5037
, pp. 331
-
-
Hau-Riege, S.P.1
Barty, A.2
Mirkarimi, P.B.3
Stearns, D.G.4
Chapman, H.5
Sweeney, D.6
Clift, M.7
Gullikson, E.8
Yi, M.-S.9
-
14
-
-
0000522975
-
Mask blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers
-
P. A. Kearney, C. E. Moore, S. I. Tan, S. P. Vernon, and R. A. Levesque, "Mask blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers", J. Vac. Sci. Technol. B 156, 2452, 1997
-
(1997)
J. Vac. Sci. Technol. B
, vol.156
, pp. 2452
-
-
Kearney, P.A.1
Moore, C.E.2
Tan, S.I.3
Vernon, S.P.4
Levesque, R.A.5
-
15
-
-
2542495970
-
Developing a viable multilayer coating process for extreme ultraviolet lithography reticles
-
P. B. Mirkarimi, Eberhard Spiller, Sherry L. Baker, Victor Sperry, Daniel G. Stearns, Eric M. Gullikson, "Developing a viable multilayer coating process for extreme ultraviolet lithography reticles", J. Microlith., Microfab., Microsyst. 3(1), 139, 2004
-
(2004)
J. Microlith., Microfab., Microsyst.
, vol.3
, Issue.1
, pp. 139
-
-
Mirkarimi, P.B.1
Spiller, E.2
Baker, S.L.3
Sperry, V.4
Stearns, D.G.5
Gullikson, E.M.6
-
16
-
-
0035519442
-
Review of progress in extreme ultraviolet lithography masks
-
S. Hector, and P. Mangat, "Review of progress in extreme ultraviolet lithography masks", J. Vac. Sci. Technol. B 196, 2612, 2001
-
(2001)
J. Vac. Sci. Technol. B
, vol.196
, pp. 2612
-
-
Hector, S.1
Mangat, P.2
-
17
-
-
0033267619
-
Extreme ultraviolet lithography mask patterning and printability studies with a Ta-based absorber
-
P. J. S. Mangat, S. D. Hector, M. A. Thompson, W. J. Dauksher, J. Cobb, K. D. Cummings, D. P. Mancini and D. J. Resnick, G. Cardinale, C. Henderson, P. Kearney and M. Wedowski, "Extreme ultraviolet lithography mask patterning and printability studies with a Ta-based absorber", J. Vac. Sci. Technol. B 176, 3029, 1999
-
(1999)
J. Vac. Sci. Technol. B
, vol.176
, pp. 3029
-
-
Mangat, P.J.S.1
Hector, S.D.2
Thompson, M.A.3
Dauksher, W.J.4
Cobb, J.5
Cummings, K.D.6
Mancini, D.P.7
Resnick, D.J.8
Cardinale, G.9
Henderson, C.10
Kearney, P.11
Wedowski, M.12
-
18
-
-
0000130079
-
Extreme ultraviolet lithography
-
C. W. Gwyn, R. Stulen, D. Sweeney, and D. Attwood, "Extreme ultraviolet lithography", J. Vac. Sci. Technol. B 166, 3142, 1998
-
(1998)
J. Vac. Sci. Technol. B
, vol.166
, pp. 3142
-
-
Gwyn, C.W.1
Stulen, R.2
Sweeney, D.3
Attwood, D.4
-
19
-
-
0942300017
-
Extreme ultraviolet mask fabrication with high inspection contrast TaSiNx absorber stack
-
J. Wasson, E. Weisbrod, B. Lu, P. Mangat, W. Dauksher, D. Resnick, J. Sohn, R. Engelstad, and D. Pettibone, "Extreme ultraviolet mask fabrication with high inspection contrast TaSiNx absorber stack", J. Vac. Sci. Technol. B 21(6), 3086, 2003
-
(2003)
J. Vac. Sci. Technol. B
, vol.21
, Issue.6
, pp. 3086
-
-
Wasson, J.1
Weisbrod, E.2
Lu, B.3
Mangat, P.4
Dauksher, W.5
Resnick, D.6
Sohn, J.7
Engelstad, R.8
Pettibone, D.9
-
20
-
-
0033269284
-
Characterization of the manufacturability of ultrathin resist
-
K. Nguyen, C. Lyons, J. Schefske, C. Pike, K. Phan, P. King, H. Levinson, S. Bell, and U. Okoroanyanwu, "Characterization of the manufacturability of ultrathin resist", J. Vac. Sci. Technol. B 176, 3039, 1999
-
(1999)
J. Vac. Sci. Technol. B
, vol.176
, pp. 3039
-
-
Nguyen, K.1
Lyons, C.2
Schefske, J.3
Pike, C.4
Phan, K.5
King, P.6
Levinson, H.7
Bell, S.8
Okoroanyanwu, U.9
-
21
-
-
0036379010
-
Novel design of Att-PSM structure for extreme ultra violet lithography and enhancement of image contrast during inspection
-
S.-I. Han, J. R. Wasson, P. J. S. Mangat, J. L. Cobb, K. Lucas, and S. D. Hector, "Novel Design of Att-PSM Structure for Extreme Ultra Violet Lithography and Enhancement of Image Contrast during Inspection", Proc. SPIE 4688, 481, 2002
-
(2002)
Proc. SPIE
, vol.4688
, pp. 481
-
-
Han, S.-I.1
Wasson, J.R.2
Mangat, P.J.S.3
Cobb, J.L.4
Lucas, K.5
Hector, S.D.6
-
22
-
-
33745633738
-
Novel design of Att-PSM structure for extreme ultra violet lithography and enhancement of image contrast during inspection
-
Miyazaki, Japan, 1-4 Nov
-
C. C. Nicolle, B. Andre, C. Anglade, and J. F. Damlencourt, "Novel Design of Att-PSM Structure for Extreme Ultra Violet Lithography and Enhancement of Image Contrast during Inspection", 3rd Int'l EUVL symposium, Miyazaki, Japan, 1-4 Nov, 2004
-
(2004)
3rd Int'l EUVL Symposium
-
-
Nicolle, C.C.1
Andre, B.2
Anglade, C.3
Damlencourt, J.F.4
-
23
-
-
1842579646
-
EUV mask making: An approach based on the direct patterning of the EUV reflector
-
C. Chovino, L. Dieu, E. Johnstone, J. Reyes, B. Fontaine, H. Levinson, and A. Pawloski, "EUV Mask Making: An Approach Based on the Direct Patterning of the EUV Reflector", Proc. SPIE 5256, 566, 2003
-
(2003)
Proc. SPIE
, vol.5256
, pp. 566
-
-
Chovino, C.1
Dieu, L.2
Johnstone, E.3
Reyes, J.4
Fontaine, B.5
Levinson, H.6
Pawloski, A.7
-
24
-
-
17744384738
-
Reduction of the absorber shadow effect by changing the absorber side wall angle in extreme ultraviolet lithography
-
M.-S. Yoo, Y.-D Jeon, H.-K. Oh, and J. Ahn, "Reduction of the Absorber Shadow Effect by Changing the Absorber Side Wall Angle in Extreme Ultraviolet Lithography", J. Korean. Phys. Soc., 46(4), 1020, 2005
-
(2005)
J. Korean. Phys. Soc.
, vol.46
, Issue.4
, pp. 1020
-
-
Yoo, M.-S.1
Jeon, Y.-D.2
Oh, H.-K.3
Ahn, J.4
|