The impact of EUVL mask buffer and absorber material properties on mask quality and performance

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4688, Issue 1, 2002, Pages 150-160

  Yan, Pei Yang ^a  

^a INTEL CORPORATION   (United States)

Author keywords

EUVL lithography; EUVL mask; EUVL mask absorber; EUVL mask buffer

Indexed keywords

DEFECTS; LIGHT ABSORPTION; MASKS; PHOTOLITHOGRAPHY; REFRACTIVE INDEX; THERMAL EFFECTS;

MASK ABSORBER;

ULTRAVIOLET RADIATION;

EID: 0036380264     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.472285     Document Type: Conference Paper

References (6)

1. P. Y. Yan, G. Zhang, P. Kofron, J. Powers, M. Tran, T. Liang, A. Stivers, and F. C. Lo, "EUV Mask Absorber Characterization and Selection." SPIE Vol. 4066, pp116, 2000.
2. P. Y. Yan, G. Zhang, A. Ma, and T. Liang, "TaN EUV Mask Fabrication and Characterization," SPIE Vol 4343, pp409, 2001.
3. M. Takahashi, T. Ogawa, E. Hoshino, H. Hoko, B. T. Lee, A. Chiba, H. Yamanashi, S. Okazaki, "Tantalum nitride films for the absorber material of reflective-type EUVL mask", SPIE Vol 4343, pp760, 2001.
4. http://www-cxro.lbl.gov/optical_constants.
5. C. Krautschik, M. Ito, I. Nishiyama, Otaki, "The Impact of the EUV Mask Phase Response on the Asymmetry of Bossung Curves as Predicted by Rigorous EUV Mask Simulations," SPIE Vol. 4343, pp 392, 2001.
6. P. Y. Yan, "Understanding Bossung Curve Asymmetry and Focus Shift Effect in EUVL Lithography," to be published in SPIE proceeding, Photomask Technology and Management, 2001.