Characteristics of Ru as a buffer layer or an etch stopper for EUVL mask patterning

Microelectronic Engineering

Volumn 61-62, Issue , 2002, Pages 233-239

  Lee, B T ^a,b   Hoshino, E ^a   Takahashi, M ^a   Yoneda, T ^a   Yamanashi, H ^a   Hoko, H ^a   Chiba, A ^a   Ito, M ^a   Ogawa, T ^a   Okazaki, S ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Buffer layer; Etch stopper; EUVL; Photomask; Ru

Indexed keywords

EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); MASK PATTERNING;

ETCHING; ION BEAMS; MASKS; MICROELECTRONIC PROCESSING; MULTILAYERS; RUTHENIUM;

LITHOGRAPHY;

EID: 0036643649     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00534-8     Document Type: Conference Paper

References (10)