Numerical investigation of EUV mask contact layer defect printability at the 30 nm technology node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4688, Issue 2, 2002, Pages 725-732

  Abdo, Amr Y ^a   Yan, Pei Yang ^b  

^a University of Wisconsin Madison   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Contact layer; EUV lithography; EUVL mask; Mask defect printability; Numerical simulation

Indexed keywords

CARBON; COMPUTER SIMULATION; CRYSTAL DEFECTS; MASKS; RUTHENIUM; SILICA; ULTRAVIOLET RADIATION;

MASK DEFECT PRINTABILITY;

PHOTOLITHOGRAPHY;

EID: 0036380158     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.472347     Document Type: Article

References (3)

1. C. W. Gwyn, "Extreme ultraviolet lithography, " White Paper, EUV LLC (copy available via EUV LLC, P. O. Box 969, MS-9911, Livermore, CA 94551-0069), Nov. 1999.
2. Electronics Research Laboratory, University of California, Berkeley.
3. P.-y. Yan, C.-w. Lai, and G. Cardinale, "EUV mask contact layer defect printability and requirement, " Proceedings of the 2000 SPIE Symposium on Emerging Lithography Technologies IV, 3997, pp. 508-514, 2000.