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Volumn 4688, Issue 1, 2002, Pages 481-494

Novel design of Att-PSM structure for extreme ultra violet lithography and enhancement of image contrast during inspection

Author keywords

Attenuated phase shift masks; Contact holes; Extreme ultraviolet lithography; Masks; Phase shift masks

Indexed keywords

ABERRATIONS; BANDWIDTH; COHERENT LIGHT; COMPUTER SIMULATION; DISSOLUTION; ELECTROMAGNETIC WAVE ATTENUATION; ELECTROMAGNETIC WAVE DIFFRACTION; IMAGE ENHANCEMENT; LIGHT REFLECTION; MASKS; OPTICAL MULTILAYERS; OPTICAL TRANSFER FUNCTION; PHASE SHIFT; PROJECTION SYSTEMS; THIN FILMS; ULTRAVIOLET RADIATION;

EID: 0036379010     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.472324     Document Type: Conference Paper
Times cited : (24)

References (11)
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    • Vladimir V. Ivin, Kevin D. Lucas, Tariel Makhviladze, Vadim V. Manuilov and Marina G. Medvedeva, "Extension of the traditional optical model for investigation into the EUV projection lithography capabilities," Emerging Lithographic Technologies II, SPIE volume 3331, 646-54, (1998).
    • (1998) SPIE , vol.3331 , pp. 646-654
    • Ivin, V.V.1    Lucas, K.D.2    Makhviladze, T.3    Manuilov, V.V.4    Medvedeva, M.G.5
  • 2
    • 0004245602 scopus 로고    scopus 로고
    • Semiconductor Industry Assoc. with EECA, KSIA, JEITA, and TSIA
    • "International Technology Roadmap for Semiconductors 2001 Edition," Semiconductor Industry Assoc. with EECA, KSIA, JEITA, and TSIA, 2001. See http://public.itrs.net/Files/2001ITRS/Home.htm.
    • (2001) International Technology Roadmap for Semiconductors 2001 Edition
  • 3
    • 0034768497 scopus 로고    scopus 로고
    • Equivalent multilayer bandwidth and comparison between 13.4 nm and 14.4 nm for EUV throughput calculation
    • Emerging Lithographic Technologies V
    • Weilun Chao, Eric Gullikson, and David Attwood, "Equivalent Multilayer Bandwidth and Comparison between 13.4 nm and 14.4 nm for EUV Throughput Calculation," Emerging Lithographic Technologies V, SPIE vol. 4343, (2001).
    • (2001) SPIE , vol.4343
    • Chao, W.1    Gullikson, E.2    Attwood, D.3
  • 4
    • 56249127529 scopus 로고    scopus 로고
    • Nonspecular x-ray scattering in a multilayer-coated imaging system
    • Stearns et al., "Nonspecular x-ray scattering in a multilayer-coated imaging system," J. Appl. Phys. 84, 1003 (1998).
    • (1998) J. Appl. Phys. , vol.84 , pp. 1003
    • Stearns1
  • 5
    • 0036381345 scopus 로고    scopus 로고
    • Impact of EUV light scatter on CD control as a result of mask density changes
    • Emerging Lithographic Technologies VI
    • Christof Krautschik, Masaaki Ito, and Iwao Nishiyama, "Impact of EUV Light Scatter on CD Control as a result of Mask Density Changes," to be published in Emerging Lithographic Technologies VI, SPIE Proceedings volume 4688, 2002.
    • (2002) SPIE Proceedings , vol.4688
    • Krautschik, C.1    Ito, M.2    Nishiyama, I.3
  • 7
    • 33749662988 scopus 로고    scopus 로고
    • 3 coefficient in nonparaxial 1/NA scaling equations for resolution, depth of focus, and immersion lithography
    • April
    • 3 1(1), 7-12, April 2002.
    • (2002) 3 , vol.1 , Issue.1 , pp. 7-12
    • Lin, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.