Process for improved reflectivity uniformity in extreme ultraviolet lithography (EUVL) masks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5037 I, Issue , 2003, Pages 339-346

  Thiel, Carey ^a   Racette, Ken ^a   Fisch, Emily ^a   Lawliss, Mark ^a   Kindt, Louis ^a   Huang, Chester ^a   Ackel, Robin ^a   Levy, Max ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

45nm; Absorber; Buffer; Chromium; Etch; EUVL; NGL; Tantalum nitride

Indexed keywords

ETCHING; MOLYBDENUM; OPTICAL MULTILAYERS; PHOTOLITHOGRAPHY; REFLECTION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON;

EXTREME ULTRAVIOLET LITHOGRAPHY; MULTILAYER COATED MASK BLANK; REFLECTIVITY UNIFORMITY; SILICON CAPPING LAYER;

MASKS;

EID: 0141724752     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.484988     Document Type: Conference Paper

References (13)

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