TaN EUVL mask fabrication and characterization

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4343, Issue , 2001, Pages 409-414

  Yan, P Y ^a   Zhang, G ^a   Ma, A ^a   Liang, T ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ETCHING; FABRICATION; LIGHT REFLECTION; MASKS; SPUTTER DEPOSITION; TANTALUM COMPOUNDS;

EXTREME ULTRA-VIOLET LITHOGRAPHY;

PHOTOLITHOGRAPHY;

EID: 0034763986     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436668     Document Type: Conference Paper

References (7)

1. EUV mask absorber characterization and selection
2. Cr absorber mask for extreme ultraviolet lithography
3. EUV mask fabrication with Cr absorber
4. Dry etching of Ta absorber for EUVL masks
5. Evaluation of Mo-based multilayer EUV mirrors
6. EUV mask absorber repair with focused ion beam
7. Progress in extreme ultraviolet mask repair using a focused ion beam