EUVL Mask with Ru ML Capping

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5256, Issue 2, 2003, Pages 1281-1286

  Yan, Pei Yang ^a   Zhang, Guojing ^a   Chegwidden, Scott ^a   Spiller, Eberhard ^b   Mirkarimi, Paul ^c  

^a INTEL CORPORATION   (United States)

^b Spiller X ray Optics   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

EUVL mask processing; EUVL ML mask blank; Ru capped ML

Indexed keywords

LIGHT ABSORPTION; LIGHT REFLECTION; PHOTOLITHOGRAPHY; RUTHENIUM; SILICA; SILICON; TANTALUM COMPOUNDS;

CAPPING; EXTREME ULTRA-VIOLET LITHOGRAPHY (EUVL);

MASKS;

EID: 1842579509     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.520024     Document Type: Conference Paper

References (2)

1. S. Bajt, H. Chapman, N. Nguyen, J. Alameda, J. Robinson, M. Malinowski, E. Gullikson, A. Aquila, C. Tarrio, S. Grantham, "Design and performance of capping layers for EUV multiplayer mirrors," SPIE Vol. 5037, p236-248, 2003.
2. EUVL mask SEMI standards (http://www.semi.org/PUBS/SEMIPUBS.NSF/ 94fa0e7958a87ffb882565f6000cf3aa!OpenView&Start=38)