Simulation of fine structures and defects in EUV etched multilayer masks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5374, Issue PART 2, 2004, Pages 760-769

  Deng, Yunfei ^a,b   Fontaine, Bruno La ^b   Pawloski, Adam R ^b   Neureuther, Andrew R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

Absorber stack; Defect; Etch; EUV; Inspection; Mask patterning; Multilayer; Refill; Repair; Sidewall

Indexed keywords

ABSORBER STACKS; EUV; EXTREME ULTRAVIOLET (EUV); MASK PATTERNING; REFILLS; SIDEWALLS; VOID DEFECTS;

COMPUTER SIMULATION; ELECTROMAGNETIC WAVE DIFFRACTION; ETCHING; ION BEAMS; LITHOGRAPHY; MULTILAYERS; SEMICONDUCTOR DEVICE MANUFACTURE; ULTRAVIOLET RADIATION;

MASKS;

EID: 3843071987     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.537229     Document Type: Conference Paper

References (16)

1. st EUVL Workshop in Tokyo, May 23 (2001)
2. st EUVL Workshop in Tokyo, May 23 (2001)
3. P. Yan, G. Zhang, P. Kofron, J.E. Powers, M. Tran, T. Liang, A.R. Stivers, F.-C. Lo, EUV Mask absorber characterization and selection, Proc. SPIE Vol. 4066, p. 116-123 (2000).
4. S. D. Hector, EUVL masks: requirements and potential solutions, Proc. SPIE Vol. 4688, p. 134-149 (2002).
5. A. Wolter, F.M. Kamm, and S. Wurm; Performance of EUV masks: Simulated Influence of Mask Parameters on the EUV Process Window, First International Symposium on Extreme Ultraviolet Lithography, Dallas, October 14-17 (2002)
6. S.D. Hector, S.I. Han, N.V. Edwards, K. Williams, R. Gregory, P.J.S. Mangat, and K. Rosford, Requirements for fabricating attenuated phase-shift masks for EUV lithography, First International Symposium on Extreme Ultraviolet Lithography, Dallas, Oct. 14-17 (2002)
7. D.M. Tennant, J.E. Bjorkholm, RM. DíSouza, L. Eichner, R.R. Freeman, J.Z. Pastalan, L.H. Szeto, O.R Wood II, T.E. Jewell, W.M. Mansfield, W.K. Waskiewicz, D.L. White, D.L. Windt, and A.A. MacDowell, Reflective mask technologies and imaging results in soft x-ray projection lithography, J. Vac. Sci. Technol. B 9 (6), pp 3176-3183 (1991)
8. Yunfei Deng, Bruno La Fontaine, Harry J. Levinson, Andrew R. Neureuther, Rigorous EM simulation of the influence of the structure of mask patterns on EUVL imaging, Proc. SPIE, vol. 5037-41, p.302-313 (2003)
9. B. M. La Fontaine, A. R Pawloski, Y. Deng,O. R. Wood II, H. J. Levinson, C. Chovino, L. Dieu, Architectural choices for EUV lithography masks: patterned absorbers and patterned reflectors, Proc. SPIE, vol. 5374 (2004)
10. Sang-In Han, Eric Weisbrod, Qianghua Xie, Pawitter J. Mangat, Scott D. Hector, William J. Dauksher, Design and method of fabricating phase-shift masks for extreme-ultraviolet lithography by partial etching into the EUV multilayer mirror, Proc. SPIE, vol. 5037-41, p.314-330 (2003)
11. Pei-Yang Yan, US patent publication No. US 2003/0027053 A1.
12. Eberhard Spiller, Sherry L. Baker, Paul B. Mirkarimi, Victor Sperry, Eric M. Gullikson, Daniel G. Stearns, High-Performance Mo-Si Multilayer Coatings for Extreme-Ultraviolet Lithography by Ion-Beam Deposition, Applied Optics, Vol. 42, Issue 19, 4049-4058, July (2003)
13. Stefan P. Hau-Riege, Anton Barty, Paul B. Mirkarimi, Daniel G. Stearns, Henry N. Chapman, Donald W. Sweeney, W. Miles Clift, Eric Gullikson, Moon-Suk Yi, Defect repair for extreme-ultraviolet lithography (EUVL) mask blanks, Proc. SPIE, Vol. 5037, p. 331-338 (2003)
14. P. Yan, S. Yan, G. Zhang, P. A. Kearney, J. Richards, P. Kofron, J. Chow, EUV mask absorber defect repair with focused ion beam, Proc. SPIE Vol. 3546, p. 206-213 (1998)
15. Claus Burkhardt, Sven Bauerdick, Volker Bucher, Wolfang Barth, Albrecht Ehrmann, Tarek Lutz, Jenspeter Rau, Investigation of Law Damage Mask Repair by Combination of Electron Beam and Scanning Force Technology, Micro and Nano Engineering (2002)
16. CXRO X-Ray Interactions with Matter, http://www-cxro.lbl.gov/ optical_constants/