Atomic Vapour Deposition (AVD™) process for high performance HfO 2 dielectric layers

Materials Research Society Symposium Proceedings

Volumn 811, Issue , 2004, Pages 287-292

  Cosnier, V ^a   Dabertrand, K ^a   Blonkowski, S ^a   Lhostis, S ^a   Zoll, S ^a   Morand, Y ^a   Descombes, S ^a   Guillaumot, B ^a   Hobbs, C ^c   Rochat, N ^b   Rolland, G ^b   Renault, O ^b   Garros, X ^b   Casse M ^b   Mitard, J ^b   Lehnen, P ^d   Miedl, S ^d   Lindner, J ^d   Schumacher, M ^d  

^a STMICROELECTRONICS   (France)

^b CEA GRENOBLE   (France)

^c MOTOROLA INC   (United States)

^d AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXIDATION; SECONDARY ION MASS SPECTROMETRY; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TRANSISTORS; VOLTAGE CONTROL; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC VAPOR DEPOSITION (AVD); ATTENUATED TOTAL REFLECTION (ATR); HIGH TEMPERATURE DEPOSITION; THERMAL OXIDATION;

DIELECTRIC MATERIALS;

EID: 19944433032     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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