GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN

Applied Physics Letters

Volumn 81, Issue 16, 2002, Pages 3064-3066

  Adelmann, C ^a   Gogneau, N ^a   Sarigiannidou, E ^a   Rouviere J L ^a   Daudin, B ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; GA FLUX; GA-RICH CONDITIONS; GAN LAYERS; ISLANDING; SPONTANEOUS TRANSFORMATION; SURFACTANT EFFECTS; WETTING LAYER;

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; MONOLAYERS; SURFACE ACTIVE AGENTS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM EVAPORATION;

TWO DIMENSIONAL;

EID: 79956010625     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1515114     Document Type: Article

References (14)

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