Si growth on partially relaxed Ge islands

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1560-1563

  Sutter, P ^a   Mateeva, E ^a   Lagally, M G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010385238     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589939     Document Type: Article

References (14)

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8. For a recent review on LEEM see, e.g., E. Bauer, Rep. Prog. Phys. 57, 895 (1994).
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10. The base orientation was determined relative to the dimer direction, measured in dark-field LEEM images of the growth shape of elongated two-dimensional Si islands nucleating during slow deposition (1 ML/min) at low temperature (820 K). Compare Y. W. Mo et al., Phys. Rev. Lett. 63, 2393 (1989).
11. See, e.g., R. M. Tromp and M. C. Reuter, Phys. Rev. Lett. 68, 820 (1992).
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