Evolution of shape, height, and in-plane lattice constant of Ge-rich islands during capping with Si

Applied Physics Letters

Volumn 83, Issue 18, 2003, Pages 3695-3697

  Zhong, Zhenyang ^a   Stangl, J ^a   Schaffler F ^a   Bauer, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DESORPTION; FINITE ELEMENT METHOD; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; OXIDES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; TEMPERATURE; X RAY SCATTERING;

CAPPING; GRAZING INCIDENCE X-RAY DIFFRACTION; LATTICE MISMATCH;

GERMANIUM;

EID: 0345359912     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1622785     Document Type: Article

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