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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 A, 2000, Pages 5076-5079

Influence of InxGa1-xAs (0≤x≤0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots

(3) Wang, Xiao Dong a Niu, Zhichuan a Feng, Songlin a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MONOLAYERS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

RED SHIFT; STRAIN REDUCTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0034269209 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.5076 Document Type: Article

Times cited : (13)

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