Si overgrowth of self-assembled Ge clusters on Si(001) - a scanning tunnelling microscopy study

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 247-250

  Kummer, Matthias ^a   Vögeli, Bernhard ^a   Von Känel, Hans ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; GERMANIUM; MONOLAYERS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS;

SELF-ASSEMBLED CLUSTERS;

SEMICONDUCTING SILICON;

EID: 0343022307     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00304-9     Document Type: Article

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