Influence of initial GaAs and AlAs cap layers on InAs quantum dots grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 145-149

  Ferdos, Fariba ^a   Wang, Shumin ^a   Wei, Yongqiang ^a   Sadeghi, Mahdad ^a   Zhao, Qingxiang ^a   Larsson, Anders ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

A1. Capping layer; A1. Surface morphology; A3. InAs quantum dots

Indexed keywords

MOLECULAR BEAM EPITAXY; MORPHOLOGY; REDUCTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACES;

CAPPING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037380452     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02471-5     Document Type: Conference Paper

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